Robustness Investigation by Load Pull measurement of Industrial 0.25-μm AlGaN-GaN HEMTs

被引：0

作者：

Chang, Christophe ^{[1
]}

Nobre-Santos, Arthur ^{[1
]}

Lambert, Benoit ^{[1
]}

Floriot, Didier ^{[1
]}

Gruenenpuett, Jan ^{[2
]}

Blanck, Herve ^{[2
]}

机构：

[1] United Monolith Semicond SAS, 10 Ave Quebec, F-91140 Villebon Sur Yvette, France

[2] United Monolith Semicond GmbH, D-89081 Ulm, Germany

来源：

2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2015年

关键词：

GaN-Based Devices; Load pull measurement; Reliability; Microwave Amplifier;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Limit of robustness of the GH25-10 has been investigated based on loadpull characterizations increasing step by step the Drain voltage and short term reliability tests. Up to 8W/mm at a drain voltage of 60V have been demonstrated without failure. 1hour RF life test time had been successfully carried out under these extremely enhanced conditions with no significant degradation. It is shown that the gate current is a major indicator for GaN based device degradation. Back simulations using the GH25-10 foundry non-linear model show a good agreement with the measurements assessing its prediction capability from 30V (safe operating area) to 60V.

引用

页码：196 / 198

页数：3

共 28 条

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