Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layer

被引：1
|
作者：
Shegai, O. A. [1 ]
Mashanov, V. I. [1 ]
Nikiforov, A. I. [1 ]
Ulyanov, V. V. [1 ]
Pchelyakov, O. P. [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 10期
关键词：
Photoconductivity; Ge/Si interface roughness; Percolation level; GERMANIUM QUANTUM DOTS; NANOSTRUCTURES;
D O I：
10.1016/j.physe.2010.02.026
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A photoconductivity (PC) of Si/Ge/Si structures with narrow Ge layer [thickness's 1.5 and 2 monolayers (ML)] on interband light intensity has been investigated for the different values of lateral voltage U, and temperature T. In contrast to the Si/Ge structure with 2 ML, where only monotonous PC growth was registered, for the 1.5 ML structure a stepped and a fluctuated PC were observed. These PC features are explained by a percolation of photoexcited carriers via the localized states induced by one monolayer scale Si/Ge interface roughnesses. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2518 / 2520
页数：3
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