Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layer

被引：1

作者：

Shegai, O. A. ^{[1
]}

Mashanov, V. I. ^{[1
]}

Nikiforov, A. I. ^{[1
]}

Ulyanov, V. V. ^{[1
]}

Pchelyakov, O. P. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 10期

关键词：

Photoconductivity; Ge/Si interface roughness; Percolation level; GERMANIUM QUANTUM DOTS; NANOSTRUCTURES;

D O I：

10.1016/j.physe.2010.02.026

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A photoconductivity (PC) of Si/Ge/Si structures with narrow Ge layer [thickness's 1.5 and 2 monolayers (ML)] on interband light intensity has been investigated for the different values of lateral voltage U, and temperature T. In contrast to the Si/Ge structure with 2 ML, where only monotonous PC growth was registered, for the 1.5 ML structure a stepped and a fluctuated PC were observed. These PC features are explained by a percolation of photoexcited carriers via the localized states induced by one monolayer scale Si/Ge interface roughnesses. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2518 / 2520

页数：3

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