Characterization of Pd/Ni/Au ohmic contacts on p-GaN

被引：33

作者：

Cho, HK ^{[1
]}

Hossain, T ^{[1
]}

Bae, JW ^{[1
]}

Adesida, I ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 05期

关键词：

GaN; contact resistance; Pd; Ni; intermetallic compounds;

D O I：

10.1016/j.sse.2005.01.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 x 10(17) cm(-3) using Pd/Ni/Au metallization was formed. An anneal at 500 degrees C for 1 min in a flowing N-2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 x 10(-5) K-2 Cm-2. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) depth profiles of Pd/Ni/Au contacts annealed at 500 degrees C demonstrated a strong correlation between Ni and Pd interdiffusion toward the GaN surface and a reduction in specific contact resistance. The low contact resistance is attributed to the reduction of the native oxide by Ni diffusion along with the formation of Pd and Ni related-gallide phases at the p-GaN surface region. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：774 / 778

页数：5