Landau-level mixing, floating-up extended states, and scaling behavior in a GaAs-based two-dimensional electron system containing self-assembled InAs dots

被引：0

作者：

Liu, Chieh-Wen ^{[1
]}

Liu, Chieh-I ^{[1
]}

Liang, C-T ^{[1
]}

Kim, Gil-Ho ^{[2
,3
]}

Huang, C. F. ^{[4
]}

Hang, D. R. ^{[5
]}

Chang, Y. H. ^{[1
]}

Ritchie, D. A. ^{[6
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan

[2] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 16419, South Korea

[3] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea

[4] Minist Econ Affairs, Intellectual Property Off, Patent Div 2, Taipei 106, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[6] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 08期

基金：

新加坡国家研究基金会; 英国工程与自然科学研究理事会;

关键词：

insulating state; floating-up; semicircle; QUANTUM HALL TRANSITION; INSULATOR-TRANSITION; DELOCALIZATION; LOCALIZATION; CONDUCTIVITY; UNIVERSALITY; TRANSPORT; DUALITY; GAS;

D O I：

10.1088/1361-6641/aa7a4c

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature-driven flow lines are studied in the conductivity plane in a GaAs-based two-dimensional electron system containing self-assembled InAs dots when Landau level filling factor nu = 2-4. In the insulator-quantum Hall (I-QH) transition resulting from the floating-up of the extended states, the flow diagram shows the critical behavior and we observed the expected semicircle in the strongest disorder case. By decreasing the effective disorder, we find that such flow lines can leave the I-QH regime and correspond to the plateau-plateau transition between nu = 4 and 2. The evolution of the conductivity curve at low magnetic fields demonstrates the importance of Landau-level mixing to the semicircle when the extended states float up.

引用

页数：7

共 49 条

[11] Insulator-quantum Hall transition in monolayer epitaxial graphene [J].

Huang, Lung-I. ;

Yang, Yanfei ;

Elmquist, Randolph E. ;

Lo, Shun-Tsung ;

Liu, Fan-Hung ;

Liang, Chi-Te .

RSC ADVANCES, 2016, 6 (76) :71977-71982

[12] Probing two-dimensional metallic-like and localization effects at low magnetic fields [J].

Huang, Tsai-Yu ;

Liang, C-T. ;

Kim, Gil-Ho ;

Huang, C. F. ;

Huang, Chao-Ping ;

Ritchie, D. A. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (04) :1142-1144

[13]

Huang TY, 2009, CHINESE J PHYS, V47, P401

[14] SCALING THEORY OF THE INTEGER QUANTUM HALL-EFFECT [J].

HUCKESTEIN, B .

REVIEWS OF MODERN PHYSICS, 1995, 67 (02) :357-396

[15] Quantum Hall effect at low magnetic fields [J].

Huckestein, B .

PHYSICAL REVIEW LETTERS, 2000, 84 (14) :3141-3144

[16] MAGNETIC-FIELD-INDUCED INSULATOR-QUANTUM HALL-INSULATOR TRANSITION IN A DISORDERED 2-DIMENSIONAL ELECTRON-GAS [J].

HUGHES, RJF ;

NICHOLLS, JT ;

FROST, JEF ;

LINFIELD, EH ;

PEPPER, M ;

FORD, CJB ;

RITCHIE, DA ;

JONES, GAC ;

KOGAN, E ;

KAVEH, M .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (25) :4763-4770

[17] UNIVERSAL CONDUCTANCE IN THE LOWEST LANDAU-LEVEL [J].

HUO, Y ;

HETZEL, RE ;

BHATT, RN .

PHYSICAL REVIEW LETTERS, 1993, 70 (04) :481-484

[18] DENSITY AND MAGNETIC-FIELD DEPENDENCES OF THE CONDUCTIVITY OF TWO-DIMENSIONAL ELECTRON-SYSTEMS [J].

ISIHARA, A ;

SMRCKA, L .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (34) :6777-6789

[19] OBSERVATION OF MAGNETIC-FIELD-INDUCED DELOCALIZATION - TRANSITION FROM ANDERSON INSULATOR TO QUANTUM HALL CONDUCTOR [J].

JIANG, HW ;

JOHNSON, CE ;

WANG, KL ;

HANNAHS, ST .

PHYSICAL REVIEW LETTERS, 1993, 71 (09) :1439-1442

[20] QUANTUM HALL-EFFECT AND ADDITIONAL OSCILLATIONS OF CONDUCTIVITY IN WEAK MAGNETIC-FIELDS [J].

KHMELNITSKII, DE .

PHYSICS LETTERS A, 1984, 106 (04) :182-183

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