Electrical and optical properties of boron and nitrogen implanted In2O3 thin films

被引：11

作者：

Hanamoto, K

Sasaki, M

Miyatani, K

Kaito, C

Miki, H

Nakayama, Y ^{[1
]}

机构：

[1] Ritsumeikan Univ, Dept Phys, Shiga 5258577, Japan

[2] Ind Res Ctr SHIGA Prefecture, Shiga 5203004, Japan

[3] Ritsumeikan Univ, Dept Elect & Elect Engn, Shiga 5258577, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 173卷 / 03期

关键词：

In2O3; boron implantation; nitrogen implantation; electrical resistivity; optical transmittance;

D O I：

10.1016/S0168-583X(00)00334-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electrical and optical properties of In2O3 thin films doped with boron and nitrogen have been studied. Boron and nitrogen ions were implanted into In2O3 thin films with an energy of 25 and 35 keV, respectively, at doses of 1 x 10(15)-1.6 x 10(16) cm(-2). After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two-step annealing at 350 degreesC, the electrical resistivity of the boron implanted sample with a dose of 4 x 10(15) cm(-2) achieved 4.4 x 10(-4) Omega cm with an averaged optical transmittance of 84% at a wavelength between 380 and 780 nm. On the other hand, for nitrogen implanted samples, the resistivity did not improve by ion implantation but the optical transmittance was unchanged. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：287 / 291

页数：5

共 6 条

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