Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure

被引：4
|
作者：
Gryglas, M
Przybytek, J
Baj, M
Henini, M
Eaves, L
机构：
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
来源：
HIGH PRESSURE RESEARCH | 2000年 / 18卷 / 1-6期
关键词：
single barrier; resonant tunnelling; X-minimum-related states; delta-doping; semiconductors under hydrostatic pressure; band profile calculations;
D O I：
10.1080/08957950008200949
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the resonant tunnelling of electrons through X-valley related states in a single AlAs barrier with Si donor delta -doping. Under high hydrostatic pressure all the peaks observed in the differential conductance-voltage (sigma- V) characteristics shift with a pressure rate of -15 meV/kbar, which is expected for X-minima related electronic states.
引用
收藏
页码：63 / 67
页数：5
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