RF MEMS phase shifters based on PCB MEMS technology

被引：13

作者：

Ramadoss, R ^{[1
]}

Sundaram, A

Feldner, LM

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA

[2] Sandia Natl Labs, Albuquerque, NM 87123 USA

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 11期

关键词：

D O I：

10.1049/el:20051074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An X-band main-line type loaded line RF MEMS phase shifter fabricated using printed circuit based MEMS technology is reported. The phase shifter provides a phase shift of 31.6 degrees with a minimum insertion loss of 0.56 dB at 9 GHz for an applied DC bias voltage of 40 V These phase shifters are suitable for monolithic integration with low-cost phased arrays on Teflon or Polyimide such as low dielectric constant substrates.

引用

页码：654 / 656

页数：3