A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal

被引：20

作者：

Kanyogoro, Nderitu ^{[1
]}

Buchner, Stephen ^{[1
,2
]}

McMorrow, Dale ^{[2
]}

Hughes, Harold ^{[2
]}

Liu, Michael S. ^{[3
]}

Hurst, Al ^{[4
]}

Carpasso, Charles ^{[5
]}

机构：

[1] GTEC, Crofton, MD 21114 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] TSS, Bloomington, MN 55437 USA

[4] Trusted Semicond Solut, Anoka, MN 55303 USA

[5] Freescale Semicond, Austin, TX 78535 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

关键词：

Heavy ions; laser; silicon substrate; single-event upset; SRAM;

D O I：

10.1109/TNS.2010.2085450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel methodology for completely removing the silicon substrate of SOI devices for single-event effects testing is introduced and demonstrated using a 90 nm, 4 Mb SRAM test vehicle. Applications and significance are discussed.

引用

页码：3414 / 3418

页数：5

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