Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene-Black Phosphorus Heterostructure

被引：217

作者：

Liu, Yan ^{[1
,2
]}

Shivananju, Bannur Nanjunda ^{[1
,2
,6
,7
]}

Wang, Yusheng ^{[1
,2
]}

Zhang, Yupeng ^{[3
,4
,5
,6
,7
]}

Yu, Wenzhi ^{[1
,2
]}

Xiao, Si ^{[8
]}

Sun, Tian ^{[1
,2
]}

Ma, Weiliang ^{[1
,2
]}

Mu, Haoran ^{[1
,2
]}

Lin, Shenghuang ^{[1
,2
]}

Zhang, Han ^{[3
,4
,5
]}

Lu, Yuerui ^{[9
]}

Qiu, Cheng-Wei ^{[3
,4
,5
,10
]}

Li, Shaojuan ^{[1
,2
]}

Bao, Qiaoliang ^{[1
,2
,6
,7
]}

机构：

[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China

[2] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China

[3] Shenzhen Univ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Shenzhen 518060, Peoples R China

[4] Shenzhen Univ, Sch Elect Sci & Technol, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China

[5] Shenzhen Univ, Coll Optoelect Engn, Shenzhen 518060, Peoples R China

[6] Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia

[7] Monash Univ, ARC Ctr Excellence Future Low Energy Elect Techno, Clayton, Vic 3800, Australia

[8] Cent South Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China

[9] Australian Natl Univ, Res Sch Engn, Coll Engn & Comp Sci, Canberra, ACT 2601, Australia

[10] Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore 117583, Singapore

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 41期

基金：

中国博士后科学基金; 澳大利亚研究理事会; 中国国家自然科学基金;

关键词：

IR photodetector; BP; graphene; heterostructure; responsivity; gain; stability; BAND ALIGNMENT; WORK FUNCTION; PHOTONICS;

D O I：

10.1021/acsami.7b09889

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The presence of a direct band gap and high carrier mobility in few-layer black phosphorus (BP) offers opportunities for using this material for infrared (IR) light detection. However, the poor air stability of BP and its large contact resistance with metals pose significant challenges to the fabrication of highly efficient IR photodetectors with long lifetimes. In this work, we demonstrate a graphene-BP heterostructure photodetector with ultrahigh responsivity and long-term stability at IR wavelengths. In our device architecture, the top layer of graphene functions not only as an encapsulation layer but also as a highly efficient transport layer. Under illumination, photoexcited electron-hole pairs generated in BP are separated and injected into graphene, significantly reducing the Schottky barrier between BP and the metal electrodes and leading to efficient photocurrent extraction. The graphene-BP heterostructure phototransistor exhibits a long-term photoresponse at near-infrared wavelength (1550 nm) with an ultrahigh photoresponsivity (up to 3.3 x 10(3) A W-1), a photoconductive gain (up to 1.13 x 10(9)), and a rise time of about 4 ms. Considering the thickness-dependent band gap in BP, this material represents a powerful photodetection platform that is able to sustain high performance in the IR wavelength regime with potential applications in remote sensing, biological imaging, and environmental monitoring.

引用

页码：36137 / 36145

页数：9

共 42 条

[1] Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors [J].