Tensorial Analysis of Strain Field Around Indentation on Silicon by Using Raman Spectroscopy

被引：0
|
作者：
Yamaguchi, M. [1 ]
Fujitsuka, M. [1 ]
Ueno, S. [1 ]
Kouzu, T. [2 ]
Miura, I. [2 ]
Katayama, S. [3 ]
机构：
[1] Japan Soc Promot Machine Ind, Tech Res Inst, 1-1-12 Hachiman Cho, Tokyo 2030042, Japan
[2] Renishaw KK, Tokyo 1600004, Japan
[3] Fischer Instruments KK, Saitama, Japan
来源：
XXII INTERNATIONAL CONFERENCE ON RAMAN SPECTROSCOPY | 2010年 / 1267卷
关键词：
PHASE-TRANSFORMATIONS; NANOINDENTATION; STRESS;
D O I：
10.1063/1.3482673
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：555 / +
页数：2
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