Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy

被引:64
作者
Song, Seung Hyun [1 ,2 ]
Joo, Min-Kyu [1 ,2 ]
Neumann, Michael [1 ,2 ]
Kim, Hyun [1 ,3 ]
Lee, Young Hee [1 ,3 ]
机构
[1] IBS, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea
[2] Sungkyunkwan Univ SKKU, Suwon 16419, South Korea
[3] Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea
来源
NATURE COMMUNICATIONS | 2017年 / 8卷
关键词
MOLYBDENUM-DISULFIDE MONOLAYERS; 1/F NOISE; TRANSISTORS; CONTACTS; STATES; DICHALCOGENIDES; RESISTANCE; CRYSTAL; GROWTH;
D O I
10.1038/s41467-017-02297-3
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Monolayer molybdenum disulfide (MoS2) has received intense interest as a strong candidate for next-generation electronics. However, the observed electrical properties of monolayer MoS2 exhibit several anomalies: samples universally exhibit unexpectedly low mobilities, ntype characteristics, and large contact resistances regardless of contact metal work function. These anomalies have been attributed to the presence of defects, but the mechanism behind this link has been elusive. Here we report the ionization dynamics of sulfur monovacancy defects in monolayer MoS2 probed via noise nanospectroscopy, realized by combining noise-current analysis with atomic force microscopy. Due to the nanoscale dimension of the in situ channel defined by the tip size, we probe a few monovacancy defects at a time. Monovacancy defects exhibit switching between three distinct ionization configurations, corresponding to charge states 0, -1, and -2. The most probable charge configurations are 0 and -1, providing a plausible mechanism to explain the observed anomalies of MoS2 monolayers.
引用
收藏
页数:6
相关论文
共 32 条
  • [1] Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces
    Addou, Rafik
    McDonnell, Stephen
    Barrera, Diego
    Guo, Zaibing
    Azcatl, Angelica
    Wang, Jian
    Zhu, Hui
    Hinkle, Christopher L.
    Quevedo-Lopez, Manuel
    Alshareef, Husam N.
    Colombo, Luigi
    Hsu, Julia W. P.
    Wallace, Robert M.
    [J]. ACS NANO, 2015, 9 (09) : 9124 - 9133
  • [2] High Performance Multilayer MoS2 Transistors with Scandium Contacts
    Das, Saptarshi
    Chen, Hong-Yan
    Penumatcha, Ashish Verma
    Appenzeller, Joerg
    [J]. NANO LETTERS, 2013, 13 (01) : 100 - 105
  • [3] Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts
    Guo, Y.
    Liu, D.
    Robertson, J.
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (17)
  • [4] Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations
    Han, Gang Hee
    Kybert, Nicholas J.
    Naylor, Carl H.
    Lee, Bum Su
    Ping, Jinglei
    Park, Joo Hee
    Kang, Jisoo
    Lee, Si Young
    Lee, Young Hee
    Agarwal, Ritesh
    Johnson, A. T. Charlie
    [J]. NATURE COMMUNICATIONS, 2015, 6
  • [5] WORK FUNCTION MEASUREMENTS IN GAS AMBIENT
    HANSEN, WN
    JOHNSON, KB
    [J]. SURFACE SCIENCE, 1994, 316 (03) : 373 - 382
  • [6] Pitfalls in measuring work function using photoelectron spectroscopy
    Helander, M. G.
    Greiner, M. T.
    Wang, Z. B.
    Lu, Z. H.
    [J]. APPLIED SURFACE SCIENCE, 2010, 256 (08) : 2602 - 2605
  • [7] Exploring atomic defects in molybdenum disulphide monolayers
    Hong, Jinhua
    Hu, Zhixin
    Probert, Matt
    Li, Kun
    Lv, Danhui
    Yang, Xinan
    Gu, Lin
    Mao, Nannan
    Feng, Qingliang
    Xie, Liming
    Zhang, Jin
    Wu, Dianzhong
    Zhang, Zhiyong
    Jin, Chuanhong
    Ji, Wei
    Zhang, Xixiang
    Yuan, Jun
    Zhang, Ze
    [J]. NATURE COMMUNICATIONS, 2015, 6
  • [8] 1/F NOISE SOURCES
    HOOGE, FN
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) : 1926 - 1935
  • [9] 1-F NOISE
    HOOGE, FN
    [J]. PHYSICA B & C, 1976, 83 (01): : 14 - 23
  • [10] Visualizing Point Defects in Transition-Metal Dichalcogenides Using Optical Microscopy
    Jeong, Hye Yun
    Lee, Si Young
    Ly, Thuc Hue
    Han, Gang Hee
    Kim, Hyun
    Nam, Honggi
    Jiong, Zhao
    Shin, Bong Gyu
    Yun, Seok Joon
    Kim, Jaesu
    Kim, Un Jeong
    Hwang, Sungwoo
    Lee, Young Hee
    [J]. ACS NANO, 2016, 10 (01) : 770 - 777