Fabrication of reliable InGaAs/InP DHBT structures for high speed circuit applications

被引：0

作者：

Kopf, RF ^{[1
]}

Hamm, RA ^{[1
]}

Ryan, RW ^{[1
]}

Burm, J ^{[1
]}

Tate, A ^{[1
]}

Chen, YK ^{[1
]}

Georgiou, G ^{[1
]}

Ren, F ^{[1
]}

Lang, DV ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Bell Labs Div, Murray Hill, NJ 07974 USA

来源：

PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS | 1998年 / 98卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have fabricated InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8V to 10V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in DC characteristics after operation at an emitter current density of 90kA/cm(2) and a collector bias, V-CE, of 2V at room temperature for over 500 hours. Typical common emitter current gain was 50. An f(t) of 80 and f(max) of 155 GHz were achieved for 2 x 4 mu m(2) emitter size devices.

引用

页码：534 / 547

页数：14