A planar Gunn diode operating above 100 GHz

被引：79

作者：

Khalid, A. ^{[1
]}

Pilgrim, N. J.

Dunn, G. A.

Holland, A. C.

Stanley, C. R.

Thayne, I. G.

Cumming, D. R. S.

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Aberdeen, Sch Engn & Phys Sci, Aberdeen AB24 SFX, Scotland

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 10期

关键词：

Gunn devices; semiconductor device fabrication; submillimeter wave diodes; terahertz;

D O I：

10.1109/LED.2007.904218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits. The material used was grown by molecular beam epitaxy, and devices were made using electron beam lithography. Since the frequency of oscillation is defined by the lithographically controlled anode-cathode distance, the technology shows great promise in fabricating single chip terahertz sources.

引用

页码：849 / 851

页数：3

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