Spin transport in germanium at room temperature

被引：43

作者：

Shen, C. ^{[1
]}

Trypiniotis, T. ^{[1
]}

Lee, K. Y. ^{[1
]}

Holmes, S. N. ^{[2
]}

Mansell, R. ^{[1
]}

Husain, M. ^{[3
]}

Shah, V. ^{[4
]}

Li, X. V. ^{[3
]}

Kurebayashi, H. ^{[1
]}

Farrer, I. ^{[1
]}

de Groot, C. H. ^{[3
]}

Leadley, D. R. ^{[4
]}

Bell, G. ^{[4
]}

Parker, E. H. C. ^{[4
]}

Whall, T. ^{[4
]}

Ritchie, D. A. ^{[1
]}

Barnes, C. H. W. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0WE, England

[3] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

METAL/TUNNEL BARRIER CONTACT; HOT-PHONON; INJECTION; SILICON; SEMICONDUCTOR; FUNDAMENTALS; DEVICES; GAAS; GE;

D O I：

10.1063/1.3505337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3505337]

引用

页数：3

共 34 条

[1] Photoinduced inverse spin-Hall effect: Conversion of light-polarization information into electric voltage [J].

Ando, K. ;

Morikawa, M. ;

Trypiniotis, T. ;

Fujikawa, Y. ;

Barnes, C. H. W. ;

Saitoh, E. .

APPLIED PHYSICS LETTERS, 2010, 96 (08)

[2] Electronic measurement and control of spin transport in silicon [J].

Appelbaum, Ian ;

Huang, Biqin ;

Monsma, Douwe J. .

NATURE, 2007, 447 (7142) :295-298

[3] A review on fundamentals and applications of electrophoretic deposition (EPD) [J].

Besra, Laxmidhar ;

Liu, Meilin .

PROGRESS IN MATERIALS SCIENCE, 2007, 52 (01) :1-61

[4] Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors [J].

Crooker, S. A. ;

Garlid, E. S. ;

Chantis, A. N. ;

Smith, D. L. ;

Reddy, K. S. M. ;

Hu, Q. O. ;

Kondo, T. ;

Palmstrom, C. J. ;

Crowell, P. A. .

PHYSICAL REVIEW B, 2009, 80 (04)

[5] Electrical creation of spin polarization in silicon at room temperature [J].

Dash, Saroj P. ;

Sharma, Sandeep ;

Patel, Ram S. ;

de Jong, Michel P. ;

Jansen, Ron .

NATURE, 2009, 462 (7272) :491-494

[6] Temperature-dependent electron-lattice thermalization in GaAs [J].

Del Fatti, N ;

Langot, P ;

Tommasi, R ;

Vallée, F .

PHYSICAL REVIEW B, 1999, 59 (07) :4576-4579

[7] Fermi-level pinning and charge neutrality level in germanium [J].

Dimoulas, A. ;

Tsipas, P. ;

Sotiropoulos, A. ;

Evangelou, E. K. .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[8] Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor -: art. no. 184420 [J].

Fert, A ;

Jaffrès, H .

PHYSICAL REVIEW B, 2001, 64 (18)

[9] Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor [J].

Hanbicki, AT ;

Jonker, BT ;

Itskos, G ;

Kioseoglou, G ;

Petrou, A .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1240-1242

[10] A vertical transport geometry for electrical spin injection and extraction in Si [J].

Husain, M. K. ;

Li, X. V. ;

de Groot, C. H. .

SOLID STATE COMMUNICATIONS, 2009, 149 (37-38) :1565-1568

← 1 2 3 4 →