Spin transport in germanium at room temperature

被引：43

作者：

Shen, C. ^{[1
]}

Trypiniotis, T. ^{[1
]}

Lee, K. Y. ^{[1
]}

Holmes, S. N. ^{[2
]}

Mansell, R. ^{[1
]}

Husain, M. ^{[3
]}

Shah, V. ^{[4
]}

Li, X. V. ^{[3
]}

Kurebayashi, H. ^{[1
]}

Farrer, I. ^{[1
]}

de Groot, C. H. ^{[3
]}

Leadley, D. R. ^{[4
]}

Bell, G. ^{[4
]}

Parker, E. H. C. ^{[4
]}

Whall, T. ^{[4
]}

Ritchie, D. A. ^{[1
]}

Barnes, C. H. W. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0WE, England

[3] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

METAL/TUNNEL BARRIER CONTACT; HOT-PHONON; INJECTION; SILICON; SEMICONDUCTOR; FUNDAMENTALS; DEVICES; GAAS; GE;

D O I：

10.1063/1.3505337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3505337]

引用

页数：3

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