Microstructure of YBa2Cu3O7-δ films on deliberately miscut sapphire buffered with CeO2

被引：0
作者：
Nie, J. C. [1 ]
Yamasaki, H.
机构：
[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
[2] AIST, Energy Technol Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2007年 / 460卷
基金：
中国国家自然科学基金;
关键词：
deliberately miscut sapphire; microcrack-free; microstructure; thick YBCO film;
D O I：
10.1016/j.physc.2007.04.028
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Microcrack-free thick YBa2CU3O7-delta (YBCO) films (up to 1000 nm) were successfully fabricated by pulsed laser deposition on deliberately miscut Al2O3(1 (1) over bar 02) (5.22 degrees off towards [11 (2) over bar0]) buffered with CeO2. The microstructure of the YBCO films was investigated by cross-section transmission electron microscopy (TEM). No apparent interface reaction is seen for all the TEM observations. A high density of linear defects (dislocations) aligned near c-axis are frequently observed. All the defects are initiated from the YBCO/CeO2 interface, indicating the importance of the microstructure of the CeO2 buffer layer and the sapphire substrate for the growth of YBCO. In addition, numerous small stacking faults lying in the a-b-plane were produced by the linear defects. (c) 2007 Published by Elsevier B.V.
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页码：1384 / 1385
页数：2
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