Compact low voltage high-Q CMOS active inductor suitable for RF applications

被引：47
|
作者：
Uyanik, H. Ugur [1 ]
Tarim, Nil [1 ]
机构：
[1] Istanbul Tech Univ, Elect & Commun Engn Dept, TR-34469 Istanbul, Turkey
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2007年 / 51卷 / 03期
关键词：
active inductor; low voltage; quality factor; radio-frequency integrated circuit;
D O I：
10.1007/s10470-007-9065-5
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 mu m CMOS process with 1.2 V supply voltage.
引用
收藏
页码：191 / 194
页数：4
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