High-Q integrated passive elements for high frequency applications

被引：0

作者：

Peroulis, D ^{[1
]}

Mohammadi, S ^{[1
]}

Katehi, LPB ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

2004 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using MEMS fabrication technology, we have demonstrated, very high frequency and high quality factor (Q) varactors, inductors and transformers on Si substrate. On high resistivity Si, this technology results in broadband analog varactors with continuous tuning range as high as 3:1 and 1nH inductor with Q > 60 at frequencies of 3 to 7GHz. High efficiency high-Q transformers with coupling factors 0.6 < k < 0.9 are achieved with very high self-resonance frequencies (8GHz < f(res)< 16GHz). This technology is compatible with Si fabrication technologies and can be either implemented as a post-processing step [1] or as a part of a vertical chip to interposer packaging scheme [2].

引用

页码：25 / 28

页数：4

共 18 条

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