Electrical characterization of multilayered thin film integral passive devices

被引:8
作者
Morcan, G [1 ]
Lenihan, T [1 ]
Parkerson, JP [1 ]
Schaper, L [1 ]
Ang, S [1 ]
机构
[1] Univ Arkansas, High Dens Elect Ctr, Fayetteville, AR 72701 USA
来源
48TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 1998 PROCEEDINGS | 1998年
关键词
D O I
10.1109/ECTC.1998.678700
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Current high performance multichip microelectronic packaging requires high density interconnects (<50 mu m interconnect lines and spaces). integral passive devices (those embedded within the package), and multilayering technologies. The University of Arkansas High Density Electronics Center (HiDEC) and Sheldahl Inc., have developed a high density interconnect adhesiveless metallized film substrate technology for these high performance microelectronic packaging applications. The development of multilayered thin film integral passive devices on polyimide substrates for high frequency applications (>500 MHz) is required in the electronics packaging industry. Factors driving the passive integration technology are overall system miniaturization and higher operating frequencies. With the increasing demands for miniaturization in electronic packaging, the need for miniaturization of passive devices is evident and the precise characterization of these devices is extremely important in application development. This paper describes the design considerations required for producing multilayered passive devices and the frequency dependent characteristics of multilayered resistors, capacitors, inductors, and tuned circuits. Results indicate that this new multilayered integral passives technology has the potential for denser packaging, higher reliability, lower cost, and future replacement of many surface mount devices.
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页码:240 / 246
页数:7
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