An analytical subthreshold current model for pocket-implanted NMOSFETs

被引：16
作者：
Ho, CS [1 ]
Liou, JJ
Huang, KY
Cheng, CC
机构：
[1] ProMOS Technol, R&D Div, Hsinchu 300, Taiwan
[2] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 06期
关键词：
modeling; MOSFET; pocket implantation; subthreshold current;
D O I：
10.1109/TED.2003.813340
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical subthreshold current model for metal oxide semiconductor field effect transistors (MOSFETs) with pocket implantation is presented. The model is developed based on considering an averaged localized pileup of channel dopants near the source and drain ends of channel to account for the pocket implantation effect and to derive the channel potential using a pseudo-two-dimensional (2-D) method. This, together with the conventional drift-diffusion theory, leads to the development of a subithrehold current model for pocket-implanted MOS devices. Model verification is carried out using data measured from a set of pocket-implanted NMOSFETs fabricated from a 0.17-mum, DRAM process. Very good agreement is obtained between the model calculations and measurement results.
引用
收藏
页码：1475 / 1479
页数：5
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