Threshold voltage of Si single-electron transistor

被引：18

作者：

Fujiwara, A ^{[1
]}

Horiguchi, S ^{[1
]}

Nagase, M ^{[1
]}

Takahashi, Y ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

silicon; single-electron transistor (SET); threshold voltage; offset charge; background charge; pattern-dependent oxidation; strain;

D O I：

10.1143/JJAP.42.2429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We experimentally evaluate threshold voltages of Si single-electron transistors (SET) in order to investigate the effect of offset charges. Threshold voltages show a clear relation to the gate capacitance of SETS, which is a device parameter reflecting the size of the Si island of SETS. This indicates that the fabricated Si SETS do not suffer much from random offset charges that cause the threshold voltages to fluctuate. Moreover, our theoretical analysis shows that the obtained negative threshold voltages strongly suggest the reduction of the band gap of Si islands due to oxidation-induced strain.

引用

页码：2429 / 2433

页数：5

共 50 条

[31] Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances
Imai, Shigeru
Ito, Masato
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (06)
[32] On the threshold voltage of strained-Si-Si1-xGex MOSFETs
Zhang, WM
Fossum, JG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (02) : 263 - 268
[33] SINGLE SHOT MEASUREMENT OF A SILICON SINGLE ELECTRON TRANSISTOR
Ferrus, T.
Hasko, D. G.
Morrissey, Q. R.
Burge, S. R.
Freeman, E. J.
French, M. J.
Lam, A.
Creswell, L.
Collier, R. J.
Williams, D. A.
Briggs, G. A. D.
[J]. PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY, 2009, : 317 - +
[34] Single shot measurement of a silicon single electron transistor
Hasko, D. G.
Ferrus, T.
Morrissey, Q. R.
Burge, S. R.
Freeman, E. J.
French, M. J.
Lam, A.
Creswell, L.
Collier, R. J.
Williams, D. A.
Briggs, G. A. D.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (19)
[35] Study of Threshold Voltage of p-channel Four Gate Transistor
Noor, Samantha Lubaba
Haq, A. F. M. Saniul
Hassan, Muhsiul
Debnath, Bishwajit
Islam, Md Sariful
Khan, M. Ziaur Rahman
[J]. 2013 INTERNATIONAL CONFERENCE ON INFORMATICS, ELECTRONICS & VISION (ICIEV), 2013,
[36] Tuning the Organic Electrochemical Transistor (OECT) Threshold Voltage with Monomer Blends
Priyadarshini, Diana
Li, Changbai
Rilemark, Rebecka
Abrahamsson, Tobias
Donahue, Mary J.
Strakosas, Xenofon
Ek, Fredrik
Olsson, Roger
Musumeci, Chiara
Fabiano, Simone
Berggren, Magnus
Olsson, Eva
Simon, Daniel T.
Gerasimov, Jennifer Y.
[J]. ADVANCED ELECTRONIC MATERIALS, 2024,
[37] Si GAA NW FETs threshold voltage evaluation
Dobrescu, Dragos
Cretu, Bogdan
Simoen, Eddy
Veloso, Anabela
Voicu-Spineanu, Andrei
Dobrescu, Lidia
[J]. SOLID-STATE ELECTRONICS, 2022, 194
[38] Gigahertz Single-Electron Pumping Mediated by Parasitic States
Rossi, Alessandro
Klochan, Jevgeny
Timoshenko, Janis
Hudson, Fay E.
Mottonen, Mikko
Rogge, Sven
Dzurak, Andrew S.
Kashcheyevs, Vyacheslays
Tettamanzi, Giuseppe C.
[J]. NANO LETTERS, 2018, 18 (07) : 4141 - 4147
[39] Threshold voltage model of strained Si channel nMOSFET
Zhang Zhi-Feng
Zhang He-Ming
Hu Hui-Yong
Xuan Rong-Xi
Song Jian-Jun
[J]. ACTA PHYSICA SINICA, 2009, 58 (07) : 4948 - 4952
[40] CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications
von Borany, J.
Engelmann, H-j
Heinig, K-h
Amat, E.
Hlawacek, G.
Kluepfel, F.
Huebner, R.
Moeller, W.
Pourteau, M-l
Rademaker, G.
Rommel, M.
Baier, L.
Pichler, P.
Perez-Murano, F.
Tiron, R.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (05)

← 1 2 3 4 5 →