Kinetic Monte Carlo simulation of dynamic phenomena in thin film growth

被引：1
作者：
Gallivan, MA [1 ]
Murray, RM [1 ]
Goodwin, DG [1 ]
机构：
[1] CALTECH, Div Engn & Appl Sci, Pasadena, CA 91125 USA
来源：
NEW METHODS, MECHANISMS AND MODELS OF VAPOR DEPOSITION | 2000年 / 616卷
关键词：
D O I：
10.1557/PROC-616-61
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper we describe the response of a Kinetic Monte Carlo model to time-varying growth conditions. We vary temperature and partial pressure sinusoidally and identify behavior typical of low-dimensional nonlinear systems. In particular, the frequency content of the roughness response is sensitive to the presence of steps in the surface.
引用
收藏
页码：61 / 66
页数：4
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