Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification

被引：17

作者：

Kozlovskii, V. V. ^{[1
]}

Emtsev, V. V. ^{[2
]}

Emtsev, K. V. ^{[1
]}

Strokan, N. B. ^{[2
]}

Ivanov, A. M. ^{[2
]}

Lomasov, V. N. ^{[1
]}

Oganesyan, G. A. ^{[2
]}

Lebedev, A. A. ^{[2
]}

机构：

[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 02期

关键词：

INDUCED DEFECTS; CAPACITANCE; RESONANCE; PROTON; DAMAGE;

D O I：

10.1134/S1063782608020231

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Comparative study of the effect of successive (up to fluences of 3 x 10(16) cm(-2)) irradiation with 900 keV electrons of samples made of FZ-Si and 4H-SiC (CVD) has been performed for the first time. Measurements on initial and irradiated samples were made using the van der Pauw method for silicon and the capacitance-voltage technique at a frequency of 1 kHz for silicon carbide. In addition, the spectrum of the defect levels introduced was monitored by the DLTS method for SiC. The carrier removal and defect introduction rates were determined for the two materials. It was found that the rates of defect introduction into FZ-Si and 4 H-SiC (CVD) are close to eachy other (similar to 0.1 cm(-1)), which is largely due to the almost identical threshold energies of defect generation.

引用

页码：242 / 247

页数：6

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