共 50 条
- [1] Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect TransistorsIEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (11) : 3699 - 3706Yurchuk, Ekaterina论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMueller, Johannes论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer CNT, D-01099 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyPaul, Jan论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer CNT, D-01099 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanySchloesser, Till论文数: 0 引用数: 0 h-index: 0机构: Globalfoundries Dresden Module One LLC & Co KG, D-01109 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMartin, Dominik论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyHoffmann, Raik论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer CNT, D-01099 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMueller, Stefan论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanySlesazeck, Stefan论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanySchroeeder, Uwe论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyBoschke, Roman论文数: 0 引用数: 0 h-index: 0机构: Globalfoundries Dresden Module One LLC & Co KG, D-01109 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, Germanyvan Bentum, Ralf论文数: 0 引用数: 0 h-index: 0机构: Globalfoundries Dresden Module One LLC & Co KG, D-01109 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMikolajick, Thomas论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany Tech Univ Dresden, Inst Semicond & Microsyst, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, Germany
- [2] Influence of Bulk Trap Properties in HfO2-Based Ferroelectric Layers on the Transient Dynamics of Ferroelectric Field-Effect TransistorsIEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 72 (03) : 1125 - 1130Kim, Hyoseok论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South Korea Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South KoreaMyeong, Ilho论文数: 0 引用数: 0 h-index: 0机构: Myongji Univ, Dept Elect Engn, Yongin 17058, South Korea Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South KoreaKim, Seunghyun论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South Korea Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South KoreaHong, Sungduk论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South Korea Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South KoreaKim, Sung Jin论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South Korea Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South KoreaKim, Wanki论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond Res Ctr, Adv Device Res Lab, Hwaseong 18448, Gyeonggi, South Korea Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South KoreaHa, Daewon论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond Res Ctr, Adv Device Res Lab, Hwaseong 18448, Gyeonggi, South Korea Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South KoreaKim, Dae Sin论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South Korea Samsung Elect, Semicond Res Ctr, Computat Sci & Engn Team, Hwaseong 18448, South Korea
- [3] Variable-area capacitors controlled by HfO2-based ferroelectric-gate field-effect transistorsAPPLIED PHYSICS LETTERS, 2022, 120 (26)Miyasako, Takaaki论文数: 0 引用数: 0 h-index: 0机构: Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, Japan Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, JapanYoneda, Shingo论文数: 0 引用数: 0 h-index: 0机构: Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, Japan Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, JapanHosokura, Tadasu论文数: 0 引用数: 0 h-index: 0机构: Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, Japan Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, JapanKimura, Masahiko论文数: 0 引用数: 0 h-index: 0机构: Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, Japan Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, JapanTokumitsu, Eisuke论文数: 0 引用数: 0 h-index: 0机构: Japan Adv Inst Sci & Technol JAIST, Sch Mat Sci, Nomi, Ishikawa 9231211, Japan Murata Mfg Co Ltd, Kyoto, Nagaokakyo 6178555, Japan
- [4] Photonic Synapses with Ultra-Low Energy Consumption Based on Vertical Organic Field-Effect TransistorsADVANCED OPTICAL MATERIALS, 2021, 9 (08)Chen, Tianqi论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R ChinaWang, Xin论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R ChinaHao, Dandan论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R ChinaDai, Shilei论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R ChinaOu, Qingqing论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R ChinaZhang, Junyao论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R ChinaHuang, Jia论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China Tongji Univ, Shanghai Inst Intelligent Sci & Technol, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, Shanghai 201804, Peoples R China
- [5] Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect TransistorIEEE ELECTRON DEVICE LETTERS, 2021, 42 (09) : 1280 - 1283Min, Jinhong论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea IMEC, B-3001 Leuven, Belgium Katholieke Univ Leuven, B-3001 Leuven, Belgium Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaRonchi, Nicolo论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaMcMitchell, Sean R. C.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaO'Sullivan, Barry论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaBanerjee, Kaustuv论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaVan den Bosch, Geert论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaVan Houdt, Jan论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Katholieke Univ Leuven, B-3001 Leuven, Belgium Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South KoreaShin, Changhwan论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea
- [6] An ultra-low bandgap diketopyrrolopyrrole (DPP)-based polymer with balanced ambipolar charge transport for organic field-effect transistorsRSC ADVANCES, 2016, 6 (82) : 78720 - 78726Jiang, Tao论文数: 0 引用数: 0 h-index: 0机构: Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R ChinaXue, Zhongyuan论文数: 0 引用数: 0 h-index: 0机构: Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R ChinaFord, Michael论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R ChinaShaw, Jessica论文数: 0 引用数: 0 h-index: 0机构: Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Imperial Coll London, Dept Chem, Exhibit Rd, London SW7 2AZ, England Imperial Coll London, Ctr Plast Elect, Exhibit Rd, London SW7 2AZ, England Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R ChinaCao, Xudong论文数: 0 引用数: 0 h-index: 0机构: Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R ChinaTao, Youtian论文数: 0 引用数: 0 h-index: 0机构: Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R ChinaHu, Yuanyuan论文数: 0 引用数: 0 h-index: 0机构: Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R ChinaHuang, Wei论文数: 0 引用数: 0 h-index: 0机构: Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China Nanjing Univ Posts & Telecommun, Inst Adv Mat, Key Lab Organ Elect & Informat Displays, 9 Wenyuan Rd, Nanjing 210046, Jiangsu, Peoples R China Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China
- [7] Low-voltage polymer-dielectric-based organic field-effect transistors and applicationsNANO SELECT, 2022, 3 (01): : 20 - 38Guo, Shujing论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R China Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R ChinaWang, Zhongwu论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Sch Sci, Tianjin, Peoples R China Collaborat Innovat Ctr Chem Sci & Engn, Tianjin, Peoples R China Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R ChinaChen, Xiaosong论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R China Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R ChinaLi, Lin论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Inst Mol Plus, Tianjin, Peoples R China Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R ChinaLi, Jie论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R China Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R ChinaJi, Deyang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R China Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R ChinaLi, Liqiang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R China Int Campus Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Fuzhou, Peoples R China Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R ChinaHu, Wenping论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Sch Sci, Tianjin, Peoples R China Collaborat Innovat Ctr Chem Sci & Engn, Tianjin, Peoples R China Int Campus Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Fuzhou, Peoples R China Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Inst Mol Aggregat Sci, Tianjin 300072, Peoples R China
- [8] Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect TransistorsIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2024, 12 : 569 - 572Park, Chinsung论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA SK Hynix Inc, RD Div, Icheon 17336, South Korea Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USARavindran, Prasanna Venkat论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USADas, Dipjyoti论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Technol Silchar, Sch Elect & Commun Engn, Silchar 788010, India Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USARavikumar, Priyankka Gundlapudi论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAZhang, Chengyang论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAAfroze, Nashrah论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAFernandes, Lance论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAKuo, Yu Hsin论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAHur, Jae论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAChen, Hang论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USATian, Mengkun论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAChern, Winston论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAYu, Shimeng论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USAKhan, Asif Islam论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
- [9] An innovative ultra-low voltage GOTFET based regenerative-latch Schmitt triggerMICROELECTRONICS JOURNAL, 2020, 104 (104):Vidhyadharan, Sanjay论文数: 0 引用数: 0 h-index: 0机构: Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, India Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, IndiaDan, Surya Shankar论文数: 0 引用数: 0 h-index: 0机构: Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, India Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, IndiaYadav, Ramakant论文数: 0 引用数: 0 h-index: 0机构: Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, India Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, IndiaHariprasad, Simhadri论文数: 0 引用数: 0 h-index: 0机构: Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, India Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Hyderabad Campus, Hyderabad, India
- [10] Binary polymer composite dielectrics for flexible low-voltage organic field-effect transistorsORGANIC ELECTRONICS, 2018, 53 : 205 - 212Liu, Ziyang论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R China Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R ChinaYin, Zhigang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R ChinaChen, Shan-Ci论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R ChinaDai, Shilei论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R ChinaHuang, Jia论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R ChinaZheng, Qingdong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R China