共 27 条
Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors
被引:68
作者:

Chung, Yoonyoung
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Verploegen, Eric
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Vailionis, Arturas
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Sun, Yun
论文数: 0 引用数: 0
h-index: 0
机构:
SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Nishi, Yoshio
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Murmann, Boris
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Bao, Zhenan
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
机构:
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
[4] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
基金:
美国国家科学基金会;
关键词:
Electric dipoles;
nanodielectrics;
self-assembled monolayers;
organic field-effect transistors;
n-channel transistors;
SELF-ASSEMBLED MONOLAYERS;
FIELD-EFFECT TRANSISTORS;
DEVICES;
PERFORMANCE;
PENTACENE;
STABILITY;
CIRCUITS;
DIIMIDE;
DENSITY;
D O I:
10.1021/nl104087u
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.
引用
收藏
页码:1161 / 1165
页数:5
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