Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors

被引:68
作者
Chung, Yoonyoung [2 ]
Verploegen, Eric [1 ]
Vailionis, Arturas [3 ]
Sun, Yun [4 ]
Nishi, Yoshio [2 ]
Murmann, Boris [2 ]
Bao, Zhenan [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
[4] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
基金
美国国家科学基金会;
关键词
Electric dipoles; nanodielectrics; self-assembled monolayers; organic field-effect transistors; n-channel transistors; SELF-ASSEMBLED MONOLAYERS; FIELD-EFFECT TRANSISTORS; DEVICES; PERFORMANCE; PENTACENE; STABILITY; CIRCUITS; DIIMIDE; DENSITY;
D O I
10.1021/nl104087u
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.
引用
收藏
页码:1161 / 1165
页数:5
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