Atomic layer deposition triggered Fe-In-S cluster and gradient energy band in ZnInS photoanode for improved oxygen evolution reaction

被引:55
作者
Meng, Linxing [1 ]
He, Jinlu [2 ]
Zhou, Xiaolong [3 ]
Deng, Kaimo [1 ]
Xu, Weiwei [1 ]
Kidkhunthod, Pinit [4 ]
Long, Run [2 ]
Tang, Yongbing [3 ]
Li, Liang [1 ]
机构
[1] Soochow Univ, Ctr Energy Convers Mat & Phys CECMP, Sch Phys Sci & Technol, Jiangsu Key Lab Thin Films, Suzhou, Peoples R China
[2] Beijing Normal Univ, Minist Educ, Coll Chem, Key Lab Theoret & Computat Photochem, Beijing, Peoples R China
[3] Chinese Acad Sci, Funct Thin Films Res Ctr, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China
[4] Synchrotron Light Res Inst, Nakhon Ratchasima, Thailand
基金
中国国家自然科学基金;
关键词
WATER; GENERATION; CATALYSTS;
D O I
10.1038/s41467-021-25609-0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The sluggish oxygen evolution reaction kinetics severely hinder the development of photoelectrochemical water splitting. Here the authors introduce Fe-In-S clusters onto the surface of photoanode to effectively lower the electrochemical reaction barrier. Vast bulk recombination of photo-generated carriers and sluggish surface oxygen evolution reaction (OER) kinetics severely hinder the development of photoelectrochemical water splitting. Herein, through constructing a vertically ordered ZnInS nanosheet array with an interior gradient energy band as photoanode, the bulk recombination of photogenerated carriers decreases greatly. We use the atomic layer deposition technology to introduce Fe-In-S clusters into the surface of photoanode. First-principles calculations and comprehensive characterizations indicate that these clusters effectively lower the electrochemical reaction barrier on the photoanode surface and promote the surface OER reaction kinetics through precisely affecting the second and third steps (forming processes of O* and OOH*) of the four-electron reaction. As a result, the optimal photoanode exhibits the high performance with a significantly enhanced photocurrent of 5.35 mA cm(-2) at 1.23 V-RHE and onset potential of 0.09 V-RHE. Present results demonstrate a robust platform for controllable surface modification, nanofabrication, and carrier transport.
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页数:9
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