Small Signal Analysis of Four-Wave Mixing in InAs/GaAs Quantum-Dot Semiconductor Optical Amplifiers

被引：0

作者：

Ma, Shaozhen ^{[1
]}

Chen, Zhe ^{[1
]}

Dutta, Niloy K. ^{[1
]}

机构：

[1] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XVII | 2009年 / 7211卷

关键词：

quantum dot; gain recovery; four-wave mixing; optical nonlinearity; bandwidth; MODULATION; RECOVERY;

D O I：

10.1117/12.808320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model to study four-wave mixing (FWM) wavelength conversion in InAs-GaAs quantum-dot semiconductor optical amplifier is proposed. Rate equations involving two QD states are solved to simulate the carrier density modulation in the system, results show that the existence of QD excited state contributes to the ultra fast recover time for single pulse response by serving as a carrier reservoir for the QD ground state, its speed limitations are also studied. Nondegenerate four-wave mixing process with small equations describing the evolution of all frequency components in the active region of QD-SOA are derived and solved numerically. Results show that better FWM conversion efficiency can be obtained compared with the regular bulk SOA, and the four-wave mixing bandwidth can exceed 1.5 THz when the detuning between pump and probe lights is 0.5 nm.

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页数：7

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