Low-resistance orthorhombic MoO3-x thin film derived by two-step annealing

被引：8
作者：
Meng, Lei [1 ,2 ]
Yamada, Akira [1 ]
机构：
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 1528552, Japan
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
THIN SOLID FILMS | 2018年 / 665卷
关键词：
Molybdenum oxide; Orthorhombic; Thin films; Annealing; Electrical properties; Glancing-angle X-ray diffraction; Raman spectroscopy; Fourier-transform infrared spectroscopy; OPTICAL-PROPERTIES; OXIDE-FILMS; MOLYBDENUM; HOLE; MOOX;
D O I：
10.1016/j.tsf.2018.09.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Layer structured orthorhombic MoO3-x (alpha-MoO3-x) thin film with low resistivity of about 5 Omega.cm was obtained on glass substrate via conducting a two-step annealing treatment on the thin film deposited by thermal evaporation method. The first step annealing in air enables the formation of a-phase and layered structure, while the second step annealing in N-2 gives rise to low resistivity without deteriorating crystal structure. Finally, this two-step annealing treatment empowers the formation of alpha-MoO3-x thin film on indium tin oxide (ITO) substrate, providing layer structured alpha-MoO3-x/ITO bilayer electrode for organic light emitting diode and thin film solar cells.
引用
收藏
页码：179 / 183
页数：5
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