Transient ionizing radiation effects in devices and circuits

被引：76
作者：
Alexander, DR [1 ]
机构：
[1] Vanderbilt Univ, Inst Space & Dev Elect, Nashville, TN 37235 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 03期
关键词：
diodes; ionizing radiation; microcircuits; photocurrent; silicon; transistors;
D O I：
10.1109/TNS.2003.813136
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A review and summary of over 40 years of research and development in the investigation of transient ionizing radiation effects in devices and circuits is presented. Emphasis is placed on the relationship of circuit effects to physical mechanisms at the transistor and diode level.
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页码：565 / 582
页数：18
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