Cooling rate and energy dependence of pulsed laser fabricated graphene on nickel at reduced temperature

被引：73

作者：

Koh, A. T. T. ^{[1
]}

Foong, Y. M. ^{[1
]}

Chua, Daniel H. C. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 11期

关键词：

FEW-LAYER GRAPHENE; RAMAN-SPECTROSCOPY; ELECTRONIC-PROPERTIES; EPITAXIAL GRAPHENE; GRAPHITE; FILMS; BEAM;

D O I：

10.1063/1.3489993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Few-layer graphene was fabricated on nickel substrates using pulsed laser deposition at a relatively low temperature of 750 degrees C. The effects of cooling rate and laser energy on the ability to produce crystalline graphene layers were studied. It was observed that using a cooling rate of 1 and 50 degrees C/min produced few-layer graphene while the latter gave less defects. Laser energy was a less critical factor as long as the laser energy was below 100 mJ, however a higher laser energy was detrimental to the precipitation process. The mechanisms behind the observation of such phenomena are explained. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489993]

引用

页数：3

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