Amorphous Si1-xCx:H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells

被引：15

作者：

Ogawa, Shunsuke ^{[1
]}

Okabe, Masaaki ^{[1
]}

Itoh, Takashi ^{[2
]}

Yoshida, Norimitsu ^{[1
,3
]}

Nonomura, Shuichi ^{[1
,3
]}

机构：

[1] Gifu Univ, Environm & Renewable Energy Syst, Gifu 5011193, Japan

[2] Gifu Univ, Fac Engn, Dept Elect & Elect Engn, Gifu 5011193, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

silicon carbide; titanium dioxide; solar cells; hot-wire CVD;

D O I：

10.1016/j.tsf.2007.06.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

B-doped hydrogenated amorphous silicon carbon (a-Si1-x,C-x:H) films have been prepared by hot-wire CVD (HWCVD) using SiH3CH3 as the carbon source gas. The optical bandgap energy and dark conductivity of the film are about 1.94 eV and 2 x 10(-9) S/cm, respectively. Using this film as a window layer, we have demonstrated the fabrication of solar cells having a structure of the textured SnO2(Asahi-U)/a-Sil(1-x)C(x):H(p)/a-Si1-xCx: H(buffer)/a-Si:H(i)/mu c-Si:H(n)/Al. The conversion efficiency of the cell is found to be 7.0%. (c) 2007 Elsevier B.V All rights reserved.

引用

页码：758 / 760

页数：3

共 12 条

[1] SiCx alloy films deposited by hot-wire CVD using SiH3CH3 as carbon sauce
Itoh, Takashi
Takai, Yuta
Kawasaki, Takahiro
Ogawa, Syunsuke
Isogai, Mutsumi
Yoshida, Norimitsu
Nonomura, Shuichi
CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 1628 - +
[2] Properties of hetero-structured SiCX films deposited by hot-wire CVD using SiH3CH3 as carbon source
Itoh, Takashi
Kawasaki, Takahiro
Takai, Yuta
Yoshida, Norimitsu
Nonomura, Shuichi
THIN SOLID FILMS, 2008, 516 (05) : 641 - 643
[3] Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2
Tabata, Akimori
Komura, Yusuke
Narita, Tomoki
Kondo, Akihiro
THIN SOLID FILMS, 2009, 517 (12) : 3516 - 3519
[4] Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2
Hoshide, Yoshiki
Komura, Yusuke
Tabata, Akimori
Kitagawa, Akihiko
Kondo, Akihiro
THIN SOLID FILMS, 2009, 517 (12) : 3520 - 3523
[5] ELECTRONIC AND OPTICAL-PROPERTIES OF A-SI1-XCX FILMS PREPARED FROM A H2-DILUTED MIXTURE OF SIH4 AND CH4
BAKER, SH
SPEAR, WE
GIBSON, RAG
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (02): : 213 - 223
[6] Properties of nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures
Tabata, Akirnori
Komura, Yusuke
Hoshide, Yoshiki
Narita, Tomoki
Kondo, Akihiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 561 - 565
[7] Nanocrystalline cubic silicon carbide films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperature
Komura, Y.
Tabata, A.
Narita, T.
Kondo, A.
Mizutani, T.
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1367 - 1370
[8] Effect of NH3/SiH4 gas ratios of top nitride layer on stability and leakage in a-Si:H thin film transistors
Murthy, RVR
Ma, Q
Nathan, A
Chamberlain, SG
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 73 - 78
[9] Highly conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared with a hot-wire chemical vapor deposition from SiH4/CH4/H2/N2 gas
Tabata, Akimori
Hoshide, Yoshiki
Kondo, Akihiro
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 175 (03): : 201 - 206
[10] Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system
Komura, Yusuke
Tabata, Akimori
Narita, Tomoki
Kondo, Akihiro
THIN SOLID FILMS, 2008, 516 (05) : 633 - 636

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