Amorphous Si1-xCx:H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells

被引：15

作者：

Ogawa, Shunsuke ^{[1
]}

Okabe, Masaaki ^{[1
]}

Itoh, Takashi ^{[2
]}

Yoshida, Norimitsu ^{[1
,3
]}

Nonomura, Shuichi ^{[1
,3
]}

机构：

[1] Gifu Univ, Environm & Renewable Energy Syst, Gifu 5011193, Japan

[2] Gifu Univ, Fac Engn, Dept Elect & Elect Engn, Gifu 5011193, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

silicon carbide; titanium dioxide; solar cells; hot-wire CVD;

D O I：

10.1016/j.tsf.2007.06.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

B-doped hydrogenated amorphous silicon carbon (a-Si1-x,C-x:H) films have been prepared by hot-wire CVD (HWCVD) using SiH3CH3 as the carbon source gas. The optical bandgap energy and dark conductivity of the film are about 1.94 eV and 2 x 10(-9) S/cm, respectively. Using this film as a window layer, we have demonstrated the fabrication of solar cells having a structure of the textured SnO2(Asahi-U)/a-Sil(1-x)C(x):H(p)/a-Si1-xCx: H(buffer)/a-Si:H(i)/mu c-Si:H(n)/Al. The conversion efficiency of the cell is found to be 7.0%. (c) 2007 Elsevier B.V All rights reserved.

引用

页码：758 / 760

页数：3

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