Capacitance and conductance-frequency characteristics of Au-Sb/p-GaSe:Gd Schottky barrier diode

被引:29
作者
Duman, S. [1 ]
Gurbulak, B. [1 ]
Dogan, S. [1 ]
Turut, A. [1 ]
机构
[1] Ataturk Univ, Dept Phys, Fac Sci, TR-25240 Erzurum, Turkey
关键词
Schottky barrier diode; GaSe; Interface states; Layered semiconductor; INTERFACE-STATE DENSITY; EXCESS CAPACITANCE; SEMICONDUCTOR; ADMITTANCE; DEPENDENCE; CONTACT; HEIGHT;
D O I
10.1016/j.vacuum.2010.11.018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Schottky barrier height (SBH) values have been obtained from the reverse bias capacitance-voltage (C-V) characteristics of Au-Sb/p-GaSe:Gd Schottky barrier diode (SBD) in the temperature range of 180-320 K. The forward bias capacitance-frequency (C-f) and conductance-frequency (G-f) measurements of Au-Sb/p-GaSe:Gd SBD have been carried out from 0 to 1.00 V with steps of 0.05 V. whereby the energy distribution of the interface states and their relaxation time have been determined from these characteristics. It has been seen that there is a good agreement between the experimental and theoretical C-f and G-f values. Also, the capacitance values obtained from C-f measurements have shown almost a plateau up to a certain value of frequency, then, have decreased. It has been seen that the interface state density has a very small density distribution range (6.02 x 10(10)-6.80 x 10(10) cm(-2) eV(-1)) in the energy range of (0.21-E(v))-(1.21-E(v)) eV with bias from the midgap towards the top of the valence band. The interface state density values calculated for Au-Sb/p-GaSe:Gd SBD are rather low than those given in the literature. (C) 2010 Elsevier Ltd. All rights reserved.
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页码:798 / 801
页数:4
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