Ultrasonic NDE of silicon carbide lightweight systems - art. no. 66660C

被引：0
|
作者：
Portune, Andrew R. [1 ]
Haber, Richard A. [1 ]
Brennan, Raymond E. [1 ]
机构：
[1] Rutgers State Univ, Piscataway, NJ 08854 USA
来源：
OPTICAL MATERIALS AND STRUCTURES TECHNOLOGIES III | 2007年 / 6666卷
关键词：
ultrasound; NDE; silicon carbide; lightweight systems;
D O I：
10.1117/12.736934
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Silicon carbide (SiC) high energy mirrors from M-Cubed, Schafer Corp, Poco and Trex Inc. were investigated using non-destructive ultrasound C-scan imaging. Reflected signal amplitude variations from the top Surface of the SiC mirrors were imaged to locate surface and subsurface inhomogeneities. Where possible, the bottom surface reflected signal amplitude and material velocity were mapped to evaluate bulk properties. Elastic property mapping was also performed on a dense SiC mirror sample to look for regional variations in Poisson's ratio, Young's modulus, shear modulus, and bulk modulus. These ultrasound techniques were successfully utilized for detection of subsurface inhomogeneities in the SiC mirror samples.
引用
收藏
页码：C6660 / C6660
页数：12
相关论文
共 50 条
  • [1] NTSIC (New-Technology Silicon Carbide): Evaluation of microstructure of high-strength reaction-sintered silicon carbide for optical mirror - art. no. 66660K
    Suyama, Shoko
    Itoh, Yoshiyasu
    OPTICAL MATERIALS AND STRUCTURES TECHNOLOGIES III, 2007, 6666 : K6660 - K6660
  • [2] Design and fabrication of a single crystal silicon (SCSI) telescope: A success story - art. no. 66660F
    McCarter, Douglas R.
    Paquin, Roger A.
    McCarter, Eloise
    OPTICAL MATERIALS AND STRUCTURES TECHNOLOGIES III, 2007, 6666 : F6660 - F6660
  • [3] Structure and motion of basal dislocations in silicon carbide -: art. no. 174108
    Blumenau, AT
    Fall, CJ
    Jones, R
    Öberg, S
    Frauenheim, T
    Briddon, PR
    PHYSICAL REVIEW B, 2003, 68 (17)
  • [4] Aggregation of carbon interstitials in silicon carbide:: A theoretical study -: art. no. 125201
    Gali, A
    Deák, P
    Ordejón, P
    Son, NT
    Janzén, E
    Choyke, WJ
    PHYSICAL REVIEW B, 2003, 68 (12)
  • [5] Activation of shallow boron acceptor in C/B coimplanted silicon carbide:: A theoretical study -: art. no. 102108
    Gali, A
    Hornos, T
    Deák, P
    Son, NT
    Janzén, E
    Choyke, WJ
    APPLIED PHYSICS LETTERS, 2005, 86 (10) : 1 - 3
  • [6] 38% aluminum - 62% beryllium shaped blank technology - art. no. 66660W
    Knapp, James T.
    OPTICAL MATERIALS AND STRUCTURES TECHNOLOGIES III, 2007, 6666 : W6660 - W6660
  • [7] Localized electronic states around stacking faults in silicon carbide -: art. no. 033203
    Iwata, H
    Lindefelt, U
    Öberg, S
    Briddon, PR
    PHYSICAL REVIEW B, 2002, 65 (03) : 1 - 4
  • [8] SiC-SiC composites optics for UV applications - art. no. 66660D
    Kowbel, Witold
    Withers, J. C.
    OPTICAL MATERIALS AND STRUCTURES TECHNOLOGIES III, 2007, 6666 : D6660 - D6660
  • [9] Beryllium optics and beryllium-aluminum structures for reconnaissance applications - art. no. 66660T
    Russo, Michael J.
    LoBiondo, Stephen
    Coon, Bryan
    Engelhardt, Michel
    Pinzon, William
    OPTICAL MATERIALS AND STRUCTURES TECHNOLOGIES III, 2007, 6666 : T6660 - T6660
  • [10] Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface -: art. no. 202109
    Ferre, R
    Martín, I
    Vetter, M
    Garín, M
    Alcubilla, R
    APPLIED PHYSICS LETTERS, 2005, 87 (20) : 1 - 3
12345