Highly Sensitive, Fast-Responding, and Stable Photodetector Based on ALD-Developed Monolayer TiO2

被引：12

作者：

Akbari, Mohammad Karbalaei ^{[1
]}

Hai, Zhenyin ^{[1
]}

Depuydt, Stephen ^{[1
]}

Kats, Eugene ^{[2
]}

Hu, Jie ^{[3
,4
]}

Zhuiykov, Serge ^{[1
]}

机构：

[1] Univ Ghent, Fac Bioscience Engn, Global Campus, Incheon 21985, South Korea

[2] Eco Light Pty Ltd, Mordialloc, Vic 3165, Australia

[3] Taiyuan Univ Technol, Key Lab Adv Transducers & Intelligent Control Sys, Micro & Nano Syst Res Ctr, Taiyuan 030024, Shanxi, Peoples R China

[4] Taiyuan Univ Technol, Coll Informat Engn, Taiyuan 030024, Shanxi, Peoples R China

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2017年 / 16卷 / 05期

关键词：

Atomic layer deposition; photodetectors; titanium oxide; ATOMIC LAYER DEPOSITION; HIGH-PERFORMANCE; RUTILE TIO2; THIN-FILMS; OPTICAL-PROPERTIES; ULTRAVIOLET; DETECTOR; TITANIUM; ANATASE; PHOTOLUMINESCENCE;

D O I：

10.1109/TNANO.2017.2720199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, high-quality wafer-scale monolayer TiO2 films were synthesized via atomic layer deposition and their main characteristics were investigated. The deposited TiO2 monolayer films were subsequently utilized in photodetectors (PDs), which demonstrated considerable optoelectronic performance with ultrafast response (30 mu s) and recovery (63 mu s) time, high on/off ratio (220), good reversibility, and great long-term stability (less than 2% variation after 1000 cycles). The photoresponsivity (R-lambda) and external quantum efficiency of 0.352 A/W and 109.12% were, respectively, attained at the incident laser power density of 118 mW/cm(2) (lambda = 400 nm) and V-DS = 1 V. These photoelectrical characteristics of the monolayer TiO2-based PDs confirmed that this TiO2 nanostructure could be an excellent candidate for various smart and portable applications such as UV-detection devices, photoswitches, high-speed optical communications, and image sensors.

引用

页码：880 / 887

页数：8

共 75 条

[11] Microstructure and optical properties of TiO2 thin films prepared by low pressure hot target reactive magnetron sputtering [J].