Embedded Fe Nanoparticles in the MgO Layer of CoFeB/MgO/CoFeB Perpendicular Magnetic Tunnel Junctions

被引:4
作者
Ye, Lin-Xiu [1 ]
Lee, Ching-Ming [1 ,2 ]
Chiou, Chui-Xiang [3 ]
Chang, Yang-Hua [3 ]
Chen, Wen-Jauh [2 ]
Wu, Te-Ho [1 ,2 ]
机构
[1] Natl Yunlin Univ Sci & Technol, Taiwan SPIN Res Ctr, Touliu 64002, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Grad Sch Mat Sci, Touliu 64002, Taiwan
[3] Natl Yunlin Univ Sci & Technol, Grad Sch Elect & Optoelect Engn, Touliu 64002, Taiwan
关键词
Magnetic tunnel junctions (MT[!text type='Js']Js[!/text]); perpendicular magnetic anisotropy (PMA); COULOMB-BLOCKADE; ROOM-TEMPERATURE; MAGNETORESISTANCE; BARRIERS;
D O I
10.1109/TMAG.2014.2325399
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we report the electric and magnetic effects after inserting Fe nanoparticles into the MgO layer of a Ta(25)/Co20Fe60B20(1.3)/MgO(1)/Fe(x)/MgO(1)/Co40Fe40B20(2.2)/Ta(5) structure. The samples were annealed at 300 degrees C without external magnetic field. Temperature dependence of resistivity and the anomalous Hall effect were used to infer the morphology of the Fe layer. With the addition of Fe nanoparticles, the optimal tunnel magnetoresistance ratio can be increased by up to 111.2%.
引用
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页数:3
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