Gettering effect with Al implanted into 4H-SiC CVD epitaxial layers

Structural peculiarities of thin At high dose ion implanted layers in 4H-SiC CVD epitaxial layers after short high-temperature pulse annealing were studied using secondary ion mass-spectroscopy (SIMS) and transmission electron spectroscopy (TEM). Electrical properties of the Al-implanted layers were investigated by Hall effect measurements up to 1000 K. The improvement of the structural perfection of 4H-SiC CVD epitaxial layers near p(+)-interface after Al ion implanted p(+)n junction formation, revealed earlier, was confirmed by deep level transient spectroscopy (DLTS) investigations in the temperature range 80-600 K. The possibility of an "ion gettering" effect in 4H-SiC CVD epitaxial layers after high dose At implantation and high-temperature pulse annealing is discussed.