Analysis of Temporal Masking Effect on Single-Event Upset Rates for Sequential Circuits

被引：0

作者：

Chen, R. M. ^{[1
]}

Diggins, Z. J. ^{[2
]}

Mahatme, N. N.

Wang, L. ^{[3
]}

Zhang, E. X. ^{[2
]}

Chen, Y. P. ^{[2
]}

Liu, Y. N. ^{[1
]}

Narasimham, B. ^{[4
]}

Witulski, A. F. ^{[2
]}

Bhuva, B. L. ^{[2
]}

机构：

[1] Tsinghua Univ, Key Lab Particle & Radiat Imaging, Minist Educ, Dept Engn Phys, Beijing 100084, Peoples R China

[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA

[3] Beijing Microelect Technol Inst, Beijing 100076, Peoples R China

[4] Broadcom Corp, Irvine, CA 92617 USA

来源：

2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年

关键词：

Single event upset (SEU); single event transient (SET); soft errors; sequential circuit; temporal masking effect; TIMING VULNERABILITY FACTORS; ERROR RATES; FLIP-FLOPS; PARTICLE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reduction in single-event upset rates for sequential circuits due to temporal masking effect is evaluated. Effects of supply voltage, combinational-logic delay and particle LET are analyzed for sequential circuits SEU rates.

引用

页数：4

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