Exciton states in zinc-blende InGaN/GaN quantum dot

被引：9

作者：

Xia, Congxin ^{[1
]}

Jiang, Fengchn

Wei, Shuyi

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China

[2] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China

来源：

CURRENT APPLIED PHYSICS | 2008年 / 8卷 / 02期

基金：

中国国家自然科学基金;

关键词：

exciton; InGaN; quantum dot;

D O I：

10.1016/j.cap.2007.07.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Within the framework of effective-mass approximation, exciton states confined in zinc-blende(ZB) InGaN/GaN quantum dot(QD) are investigated by means of a variational approach, considering finite band offsets. The ground-state exciton binding energy and the interband emission energy are investigated as functions of QD structural parameters in detail. Numerical results show clearly that both the QD size and In content of InGaN have a significant influence on the exciton states and interband optical transitions in the ZB InGaN/GaN QD. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：153 / 158

页数：6

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