共 24 条
Performance and defects in phosphorescent organic light-emitting diodes
被引:14
作者:
Lee, C. W.
[1
]
Renaud, C.
[1
]
Le Rendu, P.
[1
]
Nguyen, T. P.
[1
]
Seneclauze, B.
[2
]
Ziessel, R.
[2
]
Kanaan, H.
[3
]
Jolinat, P.
[3
]
机构:
[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, France
[2] ECPM, Lab Chim Mol, F-67087 Strasbourg 02, France
[3] Univ Toulouse, UPS, INPT, CNRS,LAPLACE, F-31062 Toulouse 9, France
关键词:
OLEDs;
Phosphorescent complex;
Traps;
DLTS;
ELECTROPHOSPHORESCENT DEVICES;
TRANSIENT SPECTROSCOPY;
PLATINUM(II) COMPLEXES;
CONJUGATED POLYMERS;
EFFICIENCY;
EMISSION;
GREEN;
D O I:
10.1016/j.solidstatesciences.2010.01.025
中图分类号:
O61 [无机化学];
学科分类号:
070301 ;
081704 ;
摘要:
Phosphorescent heavy metal complexes can utilize both singlet and triplet excitons and thus are interesting for doping polymer to obtain highly efficient organic light-emitting diodes In this study we have investigated devices using a new phosphorescent-metal complex containing fluorene and platinum added to a luminescent polymer blend composed of 2-(4-biphenylyl)-5-(4-tert-butyl-phenyl)-(1 3 4-oxadiazole) (PBD) and poly(9-vinylcarbazole) (PVK) The performance of devices (luminance and yield) is measured in indium tin oxide (ITO)/poly(3-4 ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT PSS)/(PVK-PBD-complex)/Al diodes The devices emit an orange light with a brightness of 607 cd/m(2) and an external quantum efficiency of 028 cd/A at 25 V In order to investigate the structural modifications of the polymer by the incorporation of phosphorescent-metal complex we have studied the defect states in diodes by charge-based Deep Level Transient Spectroscopy (Q-DLTS) Analysis of Q-DLTS spectra obtained in undoped and doped devices revealed at least three trap levels distributed in the range 0 2-0 5 eV within the band gap of the hybrid composite with trap density in the range around 10(16) cm(-3) Incorporation of Pt complex into the polymer blend modified the trap states by reducing the density of traps in the blend and by creating new trap levels in the band gap (C) 2010 Elsevier Masson SAS All rights reserved
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页码:1873 / 1876
页数:4
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