Complementary organic thin film transistor circuits fabricated directly on silicone substrates

被引:17
作者
Graz, Ingrid M. [1 ]
Lacour, Stephanie P. [1 ]
机构
[1] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England
关键词
Organic electronics; Elastomeric substrates; Thin-films; Low temperature process; FIELD-EFFECT TRANSISTORS; TECHNOLOGY;
D O I
10.1016/j.orgel.2010.08.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present work demonstrates organic circuits on a new class of substrate, silicone elastomers. The fabrication method relies on dry, additive processes performed at ultra-low substrate temperature (<100 degrees C). P-type pentacene and n-type C-60 organic thin-film transistors (TFTs) in a bottom gate, top contact architecture are prepared directly on polydimethylsiloxane (PDMS) membranes without any surface pre-treatment. Simple logic elements including complementary inverters and ambipolar transistors patterned on PDMS perform similarly to their counterparts fabricated on substrates thousands times stiffer. The processing options and mechanical compliance of the elastomeric substrate combined with organic device materials open new opportunities for compliant, lightweight, low-power and large area thin-film circuitry. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:1815 / 1820
页数:6
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