Subparabolic oxidation behavior of silicon carbide at 1300°C

被引：6

作者：

Ogbuji, LUJT ^{[1
]}

机构：

[1] NASA, Lewis Res Ctr Grp, SETAR Team, Cleveland, OH 44135 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 08期

关键词：

D O I：

10.1149/1.1838728

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The phenomenon of subparabolic oxide growth rate, more the rule than the exception in the oxidation of silica formers, is examined in light of data sets acquired in SiC oxidation experiments at 1300 degrees C. Negative deviation from parabolic kinetics is shown to correlate with oxide crystallinity. The data sets were analyzed to ascertain the predominant and contributing growth laws, and tested with models that describe the overall kinetics as combinations of the familiar growth laws.

引用

页码：2876 / 2882

页数：7

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