Low In solubility and band offsets in the small-x β-Ga2O3/(Ga1-xInx)2O3 system

被引：19
|
作者：
Maccioni, Maria Barbara [1 ]
Ricci, Francesco
Fiorentini, Vincenzo
机构：
[1] Univ Cagliari, Dept Phys, I-09042 Monserrato, CA, Italy
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 02期
关键词：
SCISSOR OPERATOR; SEMICONDUCTORS;
D O I：
10.7567/APEX.8.021102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using first-principles calculations, we show that the maximum reachable concentration x in the (Ga1-xInx)(2)O-3 alloy in the low-x regime (i.e., the In solubility beta-Ga2O3) is around 10%. We then calculate the band alignment at the (100) interface between beta-Ga2O3 and (Ga1-xInx)(2)O-3 at 12%, the nearest computationally treatable concentration. The alignment is strongly strain-dependent: it is type-B staggered when the alloy is epitaxial on Ga2O3 and type-A straddling in a free-standing superlattice. Our results suggest a limited range of applicability of low-In-content GaInO alloys. (C) 2015 The Japan Society of Applied Physics
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页数：3
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