Low In solubility and band offsets in the small-x β-Ga2O3/(Ga1-xInx)2O3 system

被引：19

作者：

Maccioni, Maria Barbara ^{[1
]}

Ricci, Francesco

Fiorentini, Vincenzo

机构：

[1] Univ Cagliari, Dept Phys, I-09042 Monserrato, CA, Italy

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 02期

关键词：

SCISSOR OPERATOR; SEMICONDUCTORS;

D O I：

10.7567/APEX.8.021102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using first-principles calculations, we show that the maximum reachable concentration x in the (Ga1-xInx)(2)O-3 alloy in the low-x regime (i.e., the In solubility beta-Ga2O3) is around 10%. We then calculate the band alignment at the (100) interface between beta-Ga2O3 and (Ga1-xInx)(2)O-3 at 12%, the nearest computationally treatable concentration. The alignment is strongly strain-dependent: it is type-B staggered when the alloy is epitaxial on Ga2O3 and type-A straddling in a free-standing superlattice. Our results suggest a limited range of applicability of low-In-content GaInO alloys. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

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