Photoresist-free fabrication process for a-Si:H thin film transistors

被引：15
|
作者：
Gleskova, H
Wagner, S
Shen, DS
机构：
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷
关键词：
thin film transistors; photoresist-free; xerographic toner; threshold voltage; electron mobility;
D O I：
10.1016/S0022-3093(98)00308-1
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of similar to 10(7), a threshold voltage of similar to 3 V and an electron mobility of similar to 1 cm(2) V(-1) s(-1). (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1217 / 1220
页数：4
相关论文
共 50 条
  • [31] Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target
    Lee, J. H.
    Lee, C. Y.
    Nam, H. S.
    Lee, J. G.
    Yang, H. J.
    Ho, W. J.
    Jeong, J. Y.
    Koo, D. H.
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (11) : 2209 - 2213
  • [32] An analytical model based on surface potential for a-Si:H thin-film transistors
    Liu, Yuan
    Yao, Ruo-He
    Deng, Wan-Ling
    Li, Bin
    JOURNAL OF DISPLAY TECHNOLOGY, 2008, 4 (02): : 180 - 187
  • [33] Effect of UV illumination on inverted-staggered a-Si:H thin film transistors
    Li, Yiming
    Lou, Jen-Chung
    Chen, Chung-Le
    Hwang, Chih-Hong
    Yan, Shuoting
    EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 225 - +
  • [34] ON THE QUALITY OF CONTACTS IN a-Si:H STAGGERED ELECTRODE THIN-FILM TRANSISTORS.
    Schropp, Ruud E.I.
    Veltkamp, Joost W.C.
    Snijder, Jan
    Verwey, Jan F.
    IEEE Transactions on Electron Devices, 1985, ED-32 (09) : 1757 - 1760
  • [35] High performance a-Si:H thin film transistors based on aluminum gate metallization
    Nathan, A
    Murthy, RVR
    Park, B
    Chamberlain, SG
    MICROELECTRONICS RELIABILITY, 2000, 40 (06) : 947 - 953
  • [36] Mechanisms underlying leakage current in inverted staggered a-Si:H thin film transistors
    Murthy, RVR
    Nathan, A
    Chamberlain, SG
    PROCEEDINGS OF THE FOURTH SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES, 1999, 98 (22): : 265 - 272
  • [37] Thermal, self-heating and kink effects in a-Si:H thin film transistors
    Iniguez, B
    Wang, L
    Fjeldly, TA
    Shur, MS
    Slade, H
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 879 - 882
  • [38] PHOTOFIELD EFFECT IN a-Si:H THIN FILM MOS TRANSISTORS THEORY AND MEASUREMENT.
    Harm, A.O.
    Schropp, R.E.I.
    Verwey, J.F.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1985, 52 (01): : 59 - 70
  • [39] Device analysis for a-Si:H thin-film transistors with organic passivation layer
    Yoon, JK
    Kim, JH
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) : 335 - 337
  • [40] 100-nm channel length a-Si:H vertical thin film transistors
    Chan, I
    Nathan, A
    FLEXIBLE ELECTRONICS 2004-MATERIALS AND DEVICE TECHNOLOGY, 2004, 814 : 35 - 40
12345