Photoresist-free fabrication process for a-Si:H thin film transistors

被引：15

作者：

Gleskova, H

Wagner, S

Shen, DS

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

thin film transistors; photoresist-free; xerographic toner; threshold voltage; electron mobility;

D O I：

10.1016/S0022-3093(98)00308-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of similar to 10(7), a threshold voltage of similar to 3 V and an electron mobility of similar to 1 cm(2) V(-1) s(-1). (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1217 / 1220

页数：4

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