Photoresist-free fabrication process for a-Si:H thin film transistors

被引：15
|
作者：
Gleskova, H
Wagner, S
Shen, DS
机构：
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷
关键词：
thin film transistors; photoresist-free; xerographic toner; threshold voltage; electron mobility;
D O I：
10.1016/S0022-3093(98)00308-1
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of similar to 10(7), a threshold voltage of similar to 3 V and an electron mobility of similar to 1 cm(2) V(-1) s(-1). (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1217 / 1220
页数：4
相关论文
共 50 条
  • [1] Photoresist-free fabrication process for a-Si:H thin film transistors
    Princeton Univ, Princeton, United States
    Journal of Non-Crystalline Solids, 227-230 (Pt 2): : 1217 - 1220
  • [2] Combinatorial fabrication process for a-Si:H thin film transistors
    Aiyer, HN
    Nishioka, D
    Maruyama, R
    Shinno, H
    Matsuki, N
    Miyazaki, K
    Fujioka, H
    Koinuma, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (1AB): : L81 - L83
  • [3] Photoresist-free printing of amorphous silicon thin-film transistors
    Miller, SM
    Troian, SM
    Wagner, S
    APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3207 - 3209
  • [4] Thin channel a-Si:H thin film transistors
    Thomasson, DB
    Jackson, TN
    1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST, 1996, : 70 - 71
  • [5] Jet-printed fabrication of a-Si:H thin-film transistors and arrays
    Wong, WS
    Ready, S
    Matusiak, R
    White, SD
    Lu, JP
    Ho, J
    Street, RA
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 1335 - 1339
  • [6] Thin active layer a-Si:H thin-film transistors
    Thomasson, DB
    Dayawansa, M
    Chang, JH
    Jackson, TN
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) : 117 - 119
  • [7] 120°C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates
    Sazonov, A
    Nathan, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (02): : 780 - 782
  • [8] Analysis of temperature effect on a-Si:H thin film transistors
    Qiang, L.
    Yao, R. H.
    SOLID-STATE ELECTRONICS, 2013, 81 : 13 - 18
  • [9] Progressive degradation in a-Si:H/SiN thin film transistors
    Merticaru, AR
    Mouthaan, AJ
    Kuper, FG
    THIN SOLID FILMS, 2003, 427 (1-2) : 60 - 66
  • [10] Electrolyte-gate a-Si:H thin film transistors
    Gonçalves, DI
    Prazeres, DM
    Chu, V
    Conde, JP
    AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY-2005, 2005, 862 : 623 - 628
12345