Coulomb explosion in femtosecond laser ablation of Si(111)

被引:90
作者
Roeterdink, WG [1 ]
Juurlink, LBF [1 ]
Vaughan, OPH [1 ]
Diez, JD [1 ]
Bonn, M [1 ]
Kleyn, AW [1 ]
机构
[1] Leiden Univ, Leiden Inst Chem, Gorlaeus Labs, NL-2300 RA Leiden, Netherlands
关键词
D O I
10.1063/1.1580647
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ablation of ionized silicon is studied using near-infrared femtosecond laser pulses in the fluence regime from 1 to 9 J/cm(2). Two major peaks are observed in the mass spectrum corresponding to Si+ and Si2+. In the time-of-flight transients of Si+, a bimodal structure is observed. The fast Si+ peak corresponds to a velocity half of that observed for Si2+. This momentum scaling is clearly indicative of a Coulomb explosion. (C) 2003 American Institute of Physics.
引用
收藏
页码:4190 / 4192
页数:3
相关论文
共 16 条
[1]   Laser processing of sapphire with picosecond and sub-picosecond pulses [J].
Ashkenasi, D ;
Rosenfeld, A ;
Varel, H ;
Wahmer, M ;
Campbell, EEB .
APPLIED SURFACE SCIENCE, 1997, 120 (1-2) :65-80
[2]   PHONON-SPECTRUM OF A MODEL OF ELECTRONICALLY EXCITED SILICON [J].
BISWAS, R ;
AMBEGAOKAR, V .
PHYSICAL REVIEW B, 1982, 26 (04) :1980-1988
[3]   Time of flight mass spectroscopy of femtosecond laser ablation of solid surfaces [J].
Cavalleri, A ;
Sokolowski-Tinten, K ;
Bialkowski, J ;
von der Linde, D .
HIGH-POWER LASER ABLATION, PTS 1-2, 1998, 3343 :334-343
[4]   Onset of diffuse reflectivity and fast electron flux inhibition in 528-nm-laser solid interactions at ultrahigh intensity [J].
Feurer, T ;
Theobald, W ;
Sauerbrey, R ;
Uschmann, I ;
Altenbernd, D ;
Teubner, U ;
Gibbon, P ;
Forster, E ;
Malka, G ;
Miquel, JL .
PHYSICAL REVIEW E, 1997, 56 (04) :4608-4614
[5]   Molecular dynamics simulation of laser ablation of silicon [J].
Herrmann, RFW ;
Gerlach, J ;
Campbell, EEB .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 122 (03) :401-404
[6]   GENERATION, TRANSPORT, AND TRAPPING OF EXCESS CHARGE-CARRIERS IN CZOCHRALSKI-GROWN SAPPHIRE [J].
HUGHES, RC .
PHYSICAL REVIEW B, 1979, 19 (10) :5318-5328
[7]   ON THE EFFECT OF KNUDSEN-LAYER FORMATION ON STUDIES OF VAPORIZATION, SPUTTERING, AND DESORPTION [J].
KELLY, R ;
DREYFUS, RW .
SURFACE SCIENCE, 1988, 198 (1-2) :263-276
[8]  
SHAN J, UNPUB
[9]   FEMTOSECOND-TIME-RESOLVED SURFACE STRUCTURAL DYNAMICS OF OPTICALLY-EXCITED SILICON [J].
SHANK, CV ;
YEN, R ;
HIRLIMANN, C .
PHYSICAL REVIEW LETTERS, 1983, 51 (10) :900-902
[10]   Ab initio molecular dynamics simulation of laser melting of silicon [J].
Silvestrelli, PL ;
Alavi, A ;
Parrinello, M ;
Frenkel, D .
PHYSICAL REVIEW LETTERS, 1996, 77 (15) :3149-3152