The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

被引：9
|
作者：
Xu, Jianli [1 ,2 ]
Wu, Lin [1 ,2 ]
Li, Yufan [1 ,2 ]
Tian, Dai [1 ,2 ]
Zhu, Kai [1 ,2 ]
Gong, Xinxin [1 ,2 ]
Jin, Xiaofeng [1 ,2 ]
机构：
[1] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
来源：
SCIENCE BULLETIN | 2015年 / 60卷 / 14期
基金：
中国国家自然科学基金;
关键词：
Anomalous Hall effect; Fe; Skew scattering; Side jump; Intrinsic anomalous Hall effect; SIDE-JUMP MECHANISM; SCATTERING;
D O I：
10.1007/s11434-015-0831-y
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 Omega(-1) cm(-1) is determined experimentally for the first time. Together with 821 Omega(-1) cm(-1) in Fe(111) and 1100 Omega(-1) cm(-1) in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
引用
收藏
页码：1261 / 1265
页数：5
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