Dielectric Genome of van der Waals Heterostructures

被引:186
作者
Andersen, Kirsten [1 ]
Latini, Simone [1 ,2 ]
Thygesen, Kristian S. [1 ,2 ]
机构
[1] Tech Univ Denmark, Ctr Atom Scale Mat Design, Dept Phys, DK-2800 Lyngby, Denmark
[2] Tech Univ Denmark, Ctr Nanostruct Graphene, DK-2800 Lyngby, Denmark
基金
新加坡国家研究基金会;
关键词
van der Waals heterostructures; 2D materials; density functional theory; dielectric function; excitons; plasmons; GRAPHENE; TRANSITION; PLASMONS;
D O I
10.1021/acs.nanolett.5b01251
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Vertical stacking of two-dimensional (2D) crystals, such as graphene and hexagonal boron nitride, has recently lead to a new class of materials known as van der Waals heterostructures (vdWHs) with unique and highly tunable electronic properties. Ab initio calculations should in principle provide a powerful tool for modeling and guiding the design of vdWHs, but in their traditional form such calculations are only feasible for commensurable structures with a few layers. Here we show that the dielectric properties of realistic, incommensurable vdWHs comprising hundreds of layers can be efficiently calculated using a multiscale approach where the dielectric functions of the individual layers (the dielectric building blocks) are computed ab initio and coupled together via the long-range Coulomb interaction. We use the method to illustrate the 2D-3D transition of the dielectric function of multilayer MoS2 crystals, the hybridization of quantum plasmons in thick graphene/hBN heterostructures, and to demonstrate the intricate effect of substrate screening on the non-Rydberg exciton series in supported WS2. The dielectric building blocks for a variety of 2D crystals are available in an open database together with the software for solving the coupled electrodynamic equations.
引用
收藏
页码:4616 / 4621
页数:6
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