Observation of a blue shift in the optical response at the fundamental band gap in Ga1-xMnxAs

被引：13

作者：

de Boer, T. ^{[1
]}

Gamouras, A. ^{[1
]}

March, S. ^{[1
]}

Novak, V. ^{[2
]}

Hall, K. C. ^{[1
]}

机构：

[1] Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 1Z9, Canada

[2] Inst Phys AS CR, Prague 16253, Czech Republic

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 03期

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会;

关键词：

TEMPERATURE-GROWN GAAS; MAGNETIZATION REVERSAL; CARRIER; NONLINEARITIES; SEMICONDUCTORS; (GA;

D O I：

10.1103/PhysRevB.85.033202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of a sharp band-edge response in spectrally resolved differential reflectivity experiments on GaMnAs, in contrast to linear optical experiments in which large band-tail effects are known to dominate. The differential reflectivity response exhibits a blue shift relative to results in GaAs and LT-GaAs, consistent with the valence-band model of ferromagnetism. Our results demonstrate the utility of nonlinear optical techniques for studying the electronic structure of III-Mn-V diluted magnetic semiconductors.

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页数：5

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