Observation of a blue shift in the optical response at the fundamental band gap in Ga1-xMnxAs

被引:13
作者
de Boer, T. [1 ]
Gamouras, A. [1 ]
March, S. [1 ]
Novak, V. [2 ]
Hall, K. C. [1 ]
机构
[1] Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 1Z9, Canada
[2] Inst Phys AS CR, Prague 16253, Czech Republic
基金
加拿大自然科学与工程研究理事会; 加拿大创新基金会;
关键词
TEMPERATURE-GROWN GAAS; MAGNETIZATION REVERSAL; CARRIER; NONLINEARITIES; SEMICONDUCTORS; (GA;
D O I
10.1103/PhysRevB.85.033202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the observation of a sharp band-edge response in spectrally resolved differential reflectivity experiments on GaMnAs, in contrast to linear optical experiments in which large band-tail effects are known to dominate. The differential reflectivity response exhibits a blue shift relative to results in GaAs and LT-GaAs, consistent with the valence-band model of ferromagnetism. Our results demonstrate the utility of nonlinear optical techniques for studying the electronic structure of III-Mn-V diluted magnetic semiconductors.
引用
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页数:5
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